2.45GHz 10KW 12KW CVD diamond growth device

HMPS-2120SP，12kW/2450MHz

MPCVD Equipment

Ⅰ Introduction

The system is a set of multi-purpose, high-stability medium-pressure microwave plasma diamond growth processing equipment designed and developed according to the current advanced microwave structure concept. It has a large working area, advanced performance, high stability, unique structure, easy to use, safe and reliable, and has beautiful appearance. It is especially suitable for chemical vapor deposition (CVD) of multiple materials such as monocrystalline and polycrystalline diamond, diamond-like carbon film preparation.

Ⅱ System composition and main features

• 12kW/2450MHz microwave power generator and transmission system

• The system uses a newly developed 12kW/2450MHz solid-state microwave power generator. The microwave power is continuously adjustable from 1-12kW; the stability is better than ±1%; the ripple is better than 1%, can ensure that the microwave output is stable when the power supply voltage, load and magnetron temperature change; The PLC has good control performance and adopts a perfect line safety blocking control system, which makes the system have a long service life, excellent electrical performance, safety and reliability, simple and convenient operation. 
• The system uses an excellent microwave transmission system consisting of a high-performance microwave circulator, three-stub tuner, water load with reflected wave sampling, and connected curved waveguide. It ensures the good isolation of the reflected wave from the magnetron to make it work stably. Can easily adjust the best match when the plasma load changes, to achieve the best transmission of microwave power. And through the reflected wave sampling,  the reflected power and real - time working status are displayed in digital form.

• New large-area microwave plasma reaction chamber

The system adopts the newly developed TM mode coaxial coupling circular microwave resonant cavity, a double-layer stainless steel water-cooled cavity with a diameter of 500mm. With multi-directional observation window and specially designed microwave suppression section, and equipped with large-size quartz discharge chamber. The microwave power is concentrated, and the entire discharge chamber discharges uniformly, and a high-density, large-area uniform plasma can be generated within the power output range. The plasma is stabilized on the substrate when the power and air pressure change, thereby achieving the purpose of rapid large-area film deposition.

• Vacuum acquisition and measurement and control system

The system uses a specially designed vacuum pipeline, which is composed of 600L/s molecular pump and 8L/s vacuum pump backing pump, vacuum pipeline and vacuum valve; the system has full-range measurement regulation from atmosphere to 10-7 torr, vacuum measurement and control system . The system is equipped with a measurement range from the atmosphere to medium and low pressure.

The main air pressure of the cavity and the bypass air pressure of the sample stage are automatically adjusted and controlled by the pressure controller and electric butterfly valve, and displayed on the touch control screen. Air pressure control is stable and easy to adjust.

• Gas mass flow control system

The system adopts the 4-channel precise controllable gas mass flow control system supply and control system (MFC) consist of H2, CH4, O2 and N2. It adopts a reliable 1/4' VCR interface and is built into the equipment cabinet. The gas path is short and compact , convenient control and adjustment.

• Sample stage system

The system uses a double-layer water-cooled sample table with a diameter of Φ350mm and the molybdenum substrate with a size of Φ80mm can be placed.. The outer surface of the water-cooled sample table is smooth and the upper surface is flat; the design of the cooling channel is reasonable and the cooling effect is good.

• Temperature measurement system of substrate table

The system adopts infrared optical temperature measurement system, and the substrate samples are used for temperature measurement. Measurement control range: infrared 600~1200℃.

• Control system and cabinet

The system uses a compact and simple main structure and an independent control unit. Use PLC and touch screen for multi-parameter screen control and operation.

1) Touch screen display and operation include microwave power parameters, vacuum and operating air pressure values, gas flow parameters, substrate temperature values, etc. Meanwhile, tables and flow charts are used to make the operation more intuitive and convenient and reliable. It can realize multi-parameter setting automatic operation and control function.

2) The main control cabinet is equipped with functions such as over-current, over-temperature, automatic protection of water cut off, power supply indication, and fault indication. At the same time, it monitors the flow and temperature of key positions, such as magnetron cooling water and substrate table cooling water.

Ⅲ General technical parameters of the equipment

1) Microwave generator and transmission system

Operating frequency:       2450MHz ± 10MHz

Output power: 1 ~ 12 kW continuously adjustable

Power stability: better than ±1% (at full power )

Ripple: better than 1%

Transmission system:  Standard BJ-22 waveguide and FD-22 flange interface

Power input: 380VAC±5%/50Hz,

three-phase four-wire + ground

Cooling water flow: ≥25L/min

System standing wave coefficient: VSWR ≤ 1.5

Microwave leakage:  ≤2 mW/cm2 (Better than national standard)

2) Microwave plasma reaction chamber:

Reaction chamber: underfeed, TM mode, maximum diameter 500mm

Microwave window: circular quartz window

Matching adjustment: three-stub and coupling waveguide short-circuit piston

3) Vacuum system:

Vacuum pump: 600L/s molecular pump,

8L/ S double-stage direct link pump (backing pump)

  Ultimate vacuum degree: ≤6x10-6 torr ;  

Vacuum leak rate ≤10-9 Pa.m3/s

4) Mass flow control system:

4-channel gas MFC system: H2: 1 slm;      CH4: 100 sccm;

O2: 10 SCCM;  N2: 5 sccm;

• Sample holder system:

Sample table: Φ60 mm diameter,  double-layer water cooling;

   Substrate table size:   ~Φ80mm

• Substrate temperature measurement:

Measuring range: infrared temperature measurement 600~1800℃ (two-color)

7）Control method: PLC control, 15-inch touch screen display operation 

8）Total power supply: 380VAC±5%/50Hz, three-phase four-wire,

separate ground wire, total power consumption ≤25kW

9）Total cooling water: >45L/min, clean soft water,

   inlet water temperature is 20℃±5℃;

                  Water pressure 250-400kPa

10）Dimensions:      ~1.85 (L) x 0.9 (W) x 1.95 (H) m

11）Operating technical parameters:

   (1) The system plasma discharge coverage area is not less than Φ75mm in diameter; the plasma discharge area is stable;

   (2) Operating temperature: 600~1200℃ (infrared temperature measurement);                control accuracy ± 10℃;

   (3) Operating air pressure: 10torr~200torr,  air pressure stability ±0.1torr;

   (4) Long-term (>48h) continuous and stable work under normal conditions.

Ⅳ Equipment composition and configuration

Note: 1. The equipment conforms to relevant national electrical and   mechanical standards;

     2. Microwave leakage meets the requirements of national standards;

     3. Equipment warranty period: the whole machine warranty period is   one year.